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Advanced Technical Data
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFN 32N120
VDSS ID25
RDS(on)
= 1200V = 32A = 0.35
D
G S
S
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC= 25C
Maximum Ratings 1200 1200 30 40 32 128 32 64 4 15 780 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain TAB = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features * International standard package
* * * * * *
miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier
50/60 Hz, RMS IISOL 1 mA
t = 1 min t=1s
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 200 TJ = 25C TJ = 125C 50 3 0.35 V V nA A mA
Applications * DC-DC converters
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS(th) = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 %
* * * *
Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls
Advantages * Easy to mount
* *
Space savings High power density
DS98968B(10/03)
(c) 2003 IXYS All rights reserved
IXFN 32N120
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 28 52 15900 S pF pF pF ns ns ns ns nC nC nC 0.16 0.05 K/W K/W
miniBLOC, SOT-227 B
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 * ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz
1000 260 36
VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External),
42 98 22 400
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25
70 188
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 32 128 1.3 180 1.4 8 300 A A V ns C A
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFN 32N120
Fig. 1. Output Characteris tics @ 25 De g. C
32 28 24 VGS = 10V 5V 60 VGS = 10V 6V
Fig. 2. Exte nded Output Characteris tics @ 25 de g. C
50 40
I D - Amperes
20 16 12 8 4 0 0 2 4 6 8 10 12
I D - Amperes
5V 30
20 10
4V 0 0 5 10 15 20
4V 25 30
V D S - Volts Fig. 3. Output Characteris tics @ 125 Deg. C
32 28 24 VGS = 10V 5V 2.6 2.4 2.2 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to ID25 Value vs . Junction Tem perature
R D S (on) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 I D = 32A I D = 16A
I D - Amperes
20 16 12 8 4 0 0 4 8 12 16 20 24 4V
0.6 0.4 -50 -25 0 25 50 75 100 125 150
V D S - Volts Fig. 5. RDS(on) Norm alized to ID25 Value vs. ID
2.6 2.4 VGS = 10V TJ = 125C 35 30 25
TJ - Degrees Centigrade Fig. 6. Drain Current vs . Case Te m perature
R D S (on) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 8 16 24 32
I D - Amperes
TJ = 25C 40 48 56 64
20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
(c) 2003 IXYS All rights reserved
IXFN 32N120
Fig. 7. Input Adm ittance
40 36 32 90 80 70 TJ = -40C 25C 125C
Fig. 8. Transconductance
I D - Amperes
24 20 16 12 8 4 0 3 3.5 4 4.5 5 5.5 TJ = 125C 25C -40C
g f s - Siemens
28
60 50 40 30 20 10 0 0
8
16
24
32
40
48
56
64
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
100 90 80 10 9 8 7 VDS = 600V I D = 16A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
70 60 50 40 30 20 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 TJ = 125C TJ = 25C
VG S - Volts
6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 450
V S D - Volts Fig. 11. Capacitance
100000 f = 1MHz C iss 0.18 0.16 0.14
Q G - nanoCoulombs Fig. 12. Maxim um Transient Therm al Resistance
Capacitance - pF
R (th) J C - (C/W)
10000
0.12 0.1 0.08 0.06 0.04
C oss 1000
C rss 100 0 5 10 15 20 25 30 35 40
0.02 0
V D S - Volts
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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